Infineon HEXFET Type N-Channel MOSFET, 44 A, 55 V Enhancement, 3-Pin TO-252 IRFR1205TRPBF

RS Stock No.:: 827-4026
Mfr. Part No.:: IRFR1205TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 44 A, 55 V Enhancement, 3-Pin TO-252 IRFR1205TRPBF

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RS Stock No.:: 827-4026
Mfr. Part No.:: IRFR1205TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Power Dissipation Pd	107W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Standards/Approvals	No
	Length	6.73mm
	Height	2.39mm
	Distrelec Product Id	304-44-461
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Power Dissipation Pd 107W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Standards/Approvals No
	Length 6.73mm
	Height 2.39mm
	Distrelec Product Id 304-44-461
	Automotive Standard No

Infineon HEXFET Series MOSFET, 44A Maximum Continuous Drain Current, 107W Maximum Power Dissipation - IRFR1205TRPBF

This high-performance N-channel MOSFET is designed for efficient power management in a variety of applications. It features a maximum continuous drain current of 44A and a maximum drain-source voltage of 55V, making it suitable for professionals in the electronics and automation sectors. The enhancement mode configuration enhances switching efficiency, thereby improving circuit performance.

Features & Benefits

• Low drain-source resistance minimises power loss

• Handles power dissipation up to 107W

• High maximum operating temperature of 175°C for broad applicability

• Optimised gate charge for improved switching efficiency

• Surface-mount design simplifies integration into Compact circuits

• Lead-free construction complies with contemporary environmental standards

Applications

• Utilised in power converters to improve efficiency

• Employed in motor control circuits for precise functionality

• Ideal for switching regulators to manage voltage

• Suitable for renewable energy systems

• Appropriate for Compact portable electronics

What is the significance of the low on-resistance in this model?

The low on-resistance reduces heat generation during operation, enhancing efficiency and reliability in high-current applications.

How does the enhancement mode configuration benefit circuit design?

The enhancement mode provides better control over switching characteristics, ensuring smooth operation and optimal performance in various electronic applications.

Can this component operate in extreme temperatures?

Yes, it is rated for use in environments from -55°C to +175°C, making it appropriate for various industrial applications.

What are the electrical implications of the gate-source voltage limits?

The gate-source voltage limits ensure safe operation and prevent damage, allowing design flexibility without sacrificing reliability.

How can effective heat dissipation be achieved when using this component?

Incorporating adequate heatsinking or ventilation will facilitate effective heat dissipation, ensuring stable performance during prolonged operation periods.