Infineon HEXFET N-Channel MOSFET, 7.3 A, 100 V Enhancement, 8-Pin SOIC IRF7495TRPBF
- RS Stock No.:
- 827-3877
- Distrelec Article No.:
- 304-44-453
- Mfr. Part No.:
- IRF7495TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
PHP896.87
(exc. VAT)
PHP1,004.49
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 3,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP89.687 | PHP896.87 |
| 20 - 90 | PHP86.995 | PHP869.95 |
| 100 - 190 | PHP84.385 | PHP843.85 |
| 200 - 390 | PHP81.853 | PHP818.53 |
| 400 + | PHP79.398 | PHP793.98 |
*price indicative
- RS Stock No.:
- 827-3877
- Distrelec Article No.:
- 304-44-453
- Mfr. Part No.:
- IRF7495TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 7.3 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 7.3 A 8-Pin SOIC IRF7389TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC