DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin SOIC DMP3085LSD-13
- RS Stock No.:
- 827-0490
- Mfr. Part No.:
- DMP3085LSD-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 50 units)*
PHP512.55
(exc. VAT)
PHP574.05
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 650 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP10.251 | PHP512.55 |
| 100 - 200 | PHP9.943 | PHP497.15 |
| 250 - 450 | PHP9.545 | PHP477.25 |
| 500 - 950 | PHP9.068 | PHP453.40 |
| 1000 + | PHP8.524 | PHP426.20 |
*price indicative
- RS Stock No.:
- 827-0490
- Mfr. Part No.:
- DMP3085LSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.7V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 3.95 mm | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Standards/Approvals | MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.7V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 3.95 mm | ||
Height 1.5mm | ||
Length 4.95mm | ||
Standards/Approvals MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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