MPN

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

RS Stock No.:: 827-0462
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 50 units)*

PHP1,315.65

(exc. VAT)

PHP1,473.55

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 2,950 unit(s) shipping from December 29, 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
50 - 50	PHP26.313	PHP1,315.65
100 - 200	PHP25.774	PHP1,288.70
250 - 450	PHP25.265	PHP1,263.25
500 - 950	PHP24.756	PHP1,237.80
1000 +	PHP24.247	PHP1,212.35

*price indicative

RS Stock No.:: 827-0462
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	UDFN
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	28mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.7W
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	0.5nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Length	3.05mm
	Height	0.6mm
	Width	2.05 mm
	Standards/Approvals	AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type UDFN
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 28mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.7W
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 0.5nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Length 3.05mm
	Height 0.6mm
	Width 2.05 mm
	Standards/Approvals AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

FREE delivery for orders over ₱3,000.00

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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