MPN

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 200 mA, 60 V Enhancement, 6-Pin SC-88 DMN65D8LDW-7

RS Stock No.:: 822-2602
Mfr. Part No.:: DMN65D8LDW-7
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 200 mA, 60 V Enhancement, 6-Pin SC-88 DMN65D8LDW-7

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Bulk discount available

Subtotal (1 pack of 100 units)*

PHP572.90

(exc. VAT)

PHP641.60

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

82,700 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
100 - 100	PHP5.729	PHP572.90
200 - 400	PHP5.557	PHP555.70
500 - 900	PHP5.39	PHP539.00
1000 - 1900	PHP5.228	PHP522.80
2000 +	PHP5.071	PHP507.10

*price indicative

RS Stock No.:: 822-2602
Mfr. Part No.:: DMN65D8LDW-7
Manufacturer:: DiodesZetex

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	200mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	400mW
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	0.43nC
	Minimum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Width	1.35 mm
	Length	2.2mm
	Standards/Approvals	RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101, AEC-Q200, AEC-Q100

	Select all
	Brand DiodesZetex
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 200mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 400mW
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 0.43nC
	Minimum Operating Temperature 150°C
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Width 1.35 mm
	Length 2.2mm
	Standards/Approvals RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 200 mA, 60 V Enhancement, 6-Pin SC-88 DMN65D8LDW-7

FREE delivery for orders over ₱3,000.00

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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