Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

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Subtotal (1 pack of 25 units)*

PHP3,376.40

(exc. VAT)

PHP3,781.575

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP135.056PHP3,376.40
50 - 100PHP131.004PHP3,275.10
125 - 225PHP127.074PHP3,176.85
250 - 475PHP123.262PHP3,081.55
500 +PHP119.564PHP2,989.10

*price indicative

Packaging Options:
RS Stock No.:
826-9487
Mfr. Part No.:
IPB80P04P407ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS P

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

68nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1V

Maximum Operating Temperature

175°C

Height

4.4mm

Width

9.25 mm

Length

10mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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