Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1
- RS Stock No.:
- 826-9272
- Distrelec Article No.:
- 304-44-414
- Mfr. Part No.:
- BSP297H6327XTSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 50 units)*
PHP1,543.75
(exc. VAT)
PHP1,729.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 100 unit(s) shipping from June 08, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP30.875 | PHP1,543.75 |
| 100 - 200 | PHP29.949 | PHP1,497.45 |
| 250 - 450 | PHP28.152 | PHP1,407.60 |
| 500 - 950 | PHP25.618 | PHP1,280.90 |
| 1000 + | PHP22.544 | PHP1,127.20 |
*price indicative
- RS Stock No.:
- 826-9272
- Distrelec Article No.:
- 304-44-414
- Mfr. Part No.:
- BSP297H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 660mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.84V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 12.9nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 660mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.84V | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 12.9nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1
This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.
Features & Benefits
• N-channel configuration improves switching efficiency
• Low gate threshold voltage ensures compatibility with logic levels
• High voltage ratings accommodate a range of applications
• Enhanced power dissipation capabilities support effective thermal management
• AEC-Q101 qualification adheres to automotive industry standards
• Compact SOT-223 package supports space-efficient designs
Applications
• Utilised for motor control in automotive systems
• Applied in power management for consumer electronics
• Used in battery management systems for energy regulation
• Employed in signal amplification within communication devices
• Ideal for switch-mode power supplies that improve efficiency
What is the maximum operating temperature for optimal performance?
The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.
How should the MOSFET be installed for best results?
Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.
What type of materials is this MOSFET made from?
It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.
Can it withstand severe voltage conditions during operation?
Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.
How does the gate charge affect its performance?
The typical total gate charge is 12.9nC at 10V, ensuring fast switching times and enhanced circuit efficiency.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 200 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 200 V Depletion, 4-Pin SOT-223 BSP149H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 400 V Enhancement, 4-Pin SOT-223