Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1

RS Stock No.:: 826-9272
Mfr. Part No.:: BSP297H6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1

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PHP1,326.60

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PHP1,485.80

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200 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
50 - 50	PHP26.532	PHP1,326.60
100 - 200	PHP25.736	PHP1,286.80
250 - 450	PHP24.192	PHP1,209.60
500 - 950	PHP22.014	PHP1,100.70
1000 +	PHP19.373	PHP968.65

*price indicative

RS Stock No.:: 826-9272
Mfr. Part No.:: BSP297H6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	660mA
	Maximum Drain Source Voltage Vds	200V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.84V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12.9nC
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Width	3.5 mm
	Length	6.5mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101
	Distrelec Product Id	304-44-414

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 660mA
	Maximum Drain Source Voltage Vds 200V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.84V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12.9nC
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Width 3.5 mm
	Length 6.5mm
	Standards/Approvals No
	Automotive Standard AEC-Q101
	Distrelec Product Id 304-44-414

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1

This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.

Features & Benefits

• N-channel configuration improves switching efficiency

• Low gate threshold voltage ensures compatibility with logic levels

• High voltage ratings accommodate a range of applications

• Enhanced power dissipation capabilities support effective thermal management

• AEC-Q101 qualification adheres to automotive industry standards

• Compact SOT-223 package supports space-efficient designs

Applications

• Utilised for motor control in automotive systems

• Applied in power management for consumer electronics

• Used in battery management systems for energy regulation

• Employed in signal amplification within communication devices

• Ideal for switch-mode power supplies that improve efficiency

What is the maximum operating temperature for optimal performance?

The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.

How should the MOSFET be installed for best results?

Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.

What type of materials is this MOSFET made from?

It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.

Can it withstand severe voltage conditions during operation?

Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.

How does the gate charge affect its performance?

The typical total gate charge is 12.9nC at 10V, ensuring fast switching times and enhanced circuit efficiency.