DiodesZetex Type N-Channel MOSFET, 200 mA, 100 V Enhancement, 3-Pin TO-92 ZVN3310A
- RS Stock No.:
- 823-1820
- Mfr. Part No.:
- ZVN3310A
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP524.70
(exc. VAT)
PHP587.66
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 6,920 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP26.235 | PHP524.70 |
| 40 - 80 | PHP25.448 | PHP508.96 |
| 100 - 180 | PHP24.684 | PHP493.68 |
| 200 - 380 | PHP23.943 | PHP478.86 |
| 400 + | PHP23.225 | PHP464.50 |
*price indicative
- RS Stock No.:
- 823-1820
- Mfr. Part No.:
- ZVN3310A
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 625mW | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.41 mm | |
| Height | 4.01mm | |
| Standards/Approvals | No | |
| Length | 4.77mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 625mW | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.41 mm | ||
Height 4.01mm | ||
Standards/Approvals No | ||
Length 4.77mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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