DiodesZetex DMP Type P-Channel MOSFET, 11 A, 20 V Enhancement, 8-Pin PowerDI3333 DMP2008UFG-7
- RS Stock No.:
- 822-2611
- Mfr. Part No.:
- DMP2008UFG-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP477.375
(exc. VAT)
PHP534.65
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 11,050 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP19.095 | PHP477.38 |
| 50 - 100 | PHP18.522 | PHP463.05 |
| 125 - 225 | PHP17.781 | PHP444.53 |
| 250 - 475 | PHP16.892 | PHP422.30 |
| 500 + | PHP15.878 | PHP396.95 |
*price indicative
- RS Stock No.:
- 822-2611
- Mfr. Part No.:
- DMP2008UFG-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerDI3333 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.35 mm | |
| Height | 0.85mm | |
| Length | 3.35mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerDI3333 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.35 mm | ||
Height 0.85mm | ||
Length 3.35mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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