DiodesZetex DMN2005K Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-23 DMN2005K-7
- RS Stock No.:
- 822-2545
- Mfr. Part No.:
- DMN2005K-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP872.20
(exc. VAT)
PHP976.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP17.444 | PHP872.20 |
| 100 - 200 | PHP16.607 | PHP830.35 |
| 250 - 450 | PHP16.202 | PHP810.10 |
| 500 - 950 | PHP15.824 | PHP791.20 |
| 1000 + | PHP15.445 | PHP772.25 |
*price indicative
- RS Stock No.:
- 822-2545
- Mfr. Part No.:
- DMN2005K-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMN2005K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMN2005K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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