DiodesZetex BSS127 Type N-Channel MOSFET, 70 mA, 600 V Enhancement, 3-Pin SC-59 BSS127SSN-7
- RS Stock No.:
- 822-2176
- Mfr. Part No.:
- BSS127SSN-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP612.75
(exc. VAT)
PHP686.30
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP12.255 | PHP612.75 |
| 100 - 200 | PHP11.887 | PHP594.35 |
| 250 - 450 | PHP11.53 | PHP576.50 |
| 500 - 950 | PHP11.184 | PHP559.20 |
| 1000 + | PHP10.849 | PHP542.45 |
*price indicative
- RS Stock No.:
- 822-2176
- Mfr. Part No.:
- BSS127SSN-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SC-59 | |
| Series | BSS127 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 1.08nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Height | 1.3mm | |
| Width | 1.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SC-59 | ||
Series BSS127 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 1.08nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Height 1.3mm | ||
Width 1.7 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex BSS127 Type N-Channel MOSFET 600 V Enhancement, 3-Pin SC-59
- DiodesZetex BSS127S Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127S-7
- DiodesZetex BSS127S Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23
- Toshiba 2SK Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 2SK1062(F)
- DiodesZetex DMP Type P-Channel MOSFET 30 V Enhancement, 3-Pin SC-59
- Infineon BSR316P Type P-Channel MOSFET 100 V Enhancement, 3-Pin SC-59
- Infineon BSR92P Type P-Channel MOSFET 250 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59