N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 20)

PHP28.12

(exc. VAT)

PHP31.49

(inc. VAT)

Temporarily out of stock - back order for despatch 14/04/2026, delivery within 10 working days from desptach date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
20 - 20	PHP28.12	PHP562.40
40 - 80	PHP27.277	PHP545.54
100 - 180	PHP25.64	PHP512.80
200 - 380	PHP23.333	PHP466.66
400 +	PHP20.533	PHP410.66

**price indicative

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

SiA416DJ, N-Channel 100V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.3 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK SC-70
Series	ThunderFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	6.5 nC @ 10 V
Width	2.15mm
Length	2.15mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.75mm

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

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