Vishay Si8489EDB Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- RS Stock No.:
- 818-1438P
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 40 units (supplied on a continuous strip)*
PHP1,306.88
(exc. VAT)
PHP1,463.72
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from January 29, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 40 - 180 | PHP32.672 |
| 200 - 380 | PHP32.066 |
| 400 - 780 | PHP31.382 |
| 800 + | PHP31.232 |
*price indicative
- RS Stock No.:
- 818-1438P
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MICRO FOOT | |
| Series | Si8489EDB | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1mm | |
| Standards/Approvals | No | |
| Length | 1mm | |
| Height | 0.268mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MICRO FOOT | ||
Series Si8489EDB | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 1mm | ||
Standards/Approvals No | ||
Length 1mm | ||
Height 0.268mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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