Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

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Price Each (In a Pack of 10)

PHP53.732

(exc. VAT)

PHP60.18

(inc. VAT)

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per Unit	Per Pack**
10 - 290	PHP53.732	PHP537.32
300 - 590	PHP52.121	PHP521.21
600 - 1490	PHP50.557	PHP505.57
1500 - 2990	PHP49.041	PHP490.41
3000 +	PHP47.57	PHP475.70

**price indicative

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Manufacturer:: Vishay

Si7900AEDN, Dual N-Channel 20V (D-S) MOSFET, Common Drain
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	36 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Length	3.15mm
Width	3.15mm
Transistor Material	Si
Typical Gate Charge @ Vgs	10.5 nC @ 4.5 V
Number of Elements per Chip	2
Height	1.07mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

Dual N-Channel MOSFET, Vishay Semiconductor

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