Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

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Subtotal 300 units (supplied on a reel)*

PHP8,897.70

(exc. VAT)

PHP9,965.40

(inc. VAT)

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Last RS stock
  • Final 2,920 unit(s), ready to ship from another location

Units
Per Unit
300 - 580PHP29.659
600 - 1480PHP27.88
1500 - 2980PHP25.371
3000 +PHP22.326

*price indicative

Packaging Options:
RS Stock No.:
814-1213P
Mfr. Part No.:
SIA449DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

19W

Typical Gate Charge Qg @ Vgs

23.1nC

Forward Voltage Vf

-0.8V

Maximum Gate Source Voltage Vgs

12V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

2.15mm

Standards/Approvals

RoHS

Length

2.15mm

Height

0.8mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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