Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 812-3233P
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

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Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

PHP40.32

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PHP45.16

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Units	Per Unit
40 - 80	PHP39.111
100 - 180	PHP37.937
200 - 380	PHP36.799
400 +	PHP35.695

**price indicative

RS Stock No.:: 812-3233P
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Si4599DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Transistor Material	Si
Number of Elements per Chip	2
Length	5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

Dual N/P-Channel MOSFET, Vishay Semiconductor