Vishay Si4164DY N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC SI4164DY-T1-GE3

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Subtotal 20 units (supplied on a continuous strip)*

PHP1,553.76

(exc. VAT)

PHP1,740.22

(inc. VAT)

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  • Shipping from June 14, 2027
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Units
Per Unit
20 - 40PHP77.688
50 - 90PHP73.572
100 - 190PHP72.876
200 +PHP72.141

*price indicative

Packaging Options:
RS Stock No.:
812-3198P
Mfr. Part No.:
SI4164DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

TrenchFET Power MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

Si4164DY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0032Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

0.72V

Typical Gate Charge Qg @ Vgs

26.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC JS709A, RoHS

Width

4mm

Height

1.55mm

Length

5mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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