Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP733.60

(exc. VAT)

PHP821.60

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP36.68PHP733.60
40 - 180PHP35.579PHP711.58
200 - 380PHP34.511PHP690.22
400 - 780PHP33.476PHP669.52
800 +PHP32.472PHP649.44

*price indicative

Packaging Options:
RS Stock No.:
812-3160
Mfr. Part No.:
SI3477DV-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

58nC

Forward Voltage Vf

-0.8V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

4.2W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.1mm

Width

1.7 mm

Height

1mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


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