Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3
- RS Stock No.:
- 812-3126
- Mfr. Part No.:
- Si2338DS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP552.42
(exc. VAT)
PHP618.72
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 7,740 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP27.621 | PHP552.42 |
| 40 - 80 | PHP24.075 | PHP481.50 |
| 100 - 180 | PHP22.227 | PHP444.54 |
| 200 - 380 | PHP19.878 | PHP397.56 |
| 400 + | PHP19.255 | PHP385.10 |
*price indicative
- RS Stock No.:
- 812-3126
- Mfr. Part No.:
- Si2338DS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si2338DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si2338DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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