Vishay IRFZ Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220 IRFZ40PBF
- RS Stock No.:
- 812-0676
- Mfr. Part No.:
- IRFZ40PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP525.39
(exc. VAT)
PHP588.435
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 30 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP105.078 | PHP525.39 |
| 25 - 95 | PHP76.802 | PHP384.01 |
| 100 - 245 | PHP75.21 | PHP376.05 |
| 250 - 495 | PHP73.69 | PHP368.45 |
| 500 + | PHP73.54 | PHP367.70 |
*price indicative
- RS Stock No.:
- 812-0676
- Mfr. Part No.:
- IRFZ40PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFZ | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.52mm | |
| Height | 4.65mm | |
| Width | 4.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFZ | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.52mm | ||
Height 4.65mm | ||
Width 4.65 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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