IXYS Type N-Channel MOSFET, 150 A, 300 V Enhancement, 3-Pin TO-264 IXFK150N30P3
- RS Stock No.:
- 802-4398
- Distrelec Article No.:
- 302-53-344
- Mfr. Part No.:
- IXFK150N30P3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP1,242.52
(exc. VAT)
PHP1,391.62
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP1,242.52 |
| 10 - 49 | PHP1,205.25 |
| 50 - 99 | PHP1,169.09 |
| 100 - 249 | PHP1,134.01 |
| 250 + | PHP1,099.98 |
*price indicative
- RS Stock No.:
- 802-4398
- Distrelec Article No.:
- 302-53-344
- Mfr. Part No.:
- IXFK150N30P3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3kW | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 197nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Length | 19.96mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 30253344 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3kW | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 197nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Length 19.96mm | ||
Standards/Approvals No | ||
Distrelec Product Id 30253344 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin PLUS247
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin PLUS247 IXFX150N30P3
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-264 IXFK120N30P3
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264