onsemi RFD16N06LESM N-Channel MOSFET, 16 A, 60 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 802-2146P
- Mfr. Part No.:
- RFD16N06LESM9A
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 25 units (supplied on a continuous strip)*
PHP3,499.20
(exc. VAT)
PHP3,919.10
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 900 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 25 - 45 | PHP139.968 |
| 50 - 245 | PHP134.366 |
| 250 - 495 | PHP127.644 |
| 500 + | PHP119.99 |
*price indicative
- RS Stock No.:
- 802-2146P
- Mfr. Part No.:
- RFD16N06LESM9A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | RFD16N06LESM | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 90W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series RFD16N06LESM | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 90W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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