IXYS Type N-Channel MOSFET, 64 A, 500 V Enhancement, 3-Pin PLUS247 IXFX64N50Q3
- RS Stock No.:
- 801-1503
- Distrelec Article No.:
- 302-53-408
- Mfr. Part No.:
- IXFX64N50Q3
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
PHP1,530.82
(exc. VAT)
PHP1,714.52
(inc. VAT)
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In Stock
- 26 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP1,530.82 |
| 10 - 19 | PHP1,484.91 |
| 20 - 49 | PHP1,440.35 |
| 50 - 249 | PHP1,397.15 |
| 250 + | PHP1,355.24 |
*price indicative
- RS Stock No.:
- 801-1503
- Distrelec Article No.:
- 302-53-408
- Mfr. Part No.:
- IXFX64N50Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | PLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1kW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Height | 21.34mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253408 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type PLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1kW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Height 21.34mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253408 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin PLUS247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin PLUS247 IXFX78N50P3
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264 IXFK64N60P3
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin PLUS247