IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin PLUS247 IXFX32N100Q3
- RS Stock No.:
- 801-1487P
- Mfr. Part No.:
- IXFX32N100Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP17,446.80
(exc. VAT)
PHP19,540.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 49 | PHP1,744.68 |
| 50 - 99 | PHP1,692.35 |
| 100 - 249 | PHP1,641.58 |
| 250 + | PHP1,592.34 |
*price indicative
- RS Stock No.:
- 801-1487P
- Mfr. Part No.:
- IXFX32N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | PLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.34mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253406 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type PLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25kW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 21.34mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253406 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin PLUS247
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin PLUS247 IXFX32N80Q3
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin ISOPLUS247