IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin TO-264
- RS Stock No.:
- 801-1409P
- Mfr. Part No.:
- IXFK32N100Q3
- Manufacturer:
- IXYS
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
PHP29,592.80
(exc. VAT)
PHP33,143.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 08, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 49 | PHP2,959.28 |
| 50 - 99 | PHP2,900.07 |
| 100 - 249 | PHP2,842.18 |
| 250 + | PHP2,785.56 |
*price indicative
- RS Stock No.:
- 801-1409P
- Mfr. Part No.:
- IXFK32N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-264 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-264 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Power Dissipation Pd 1.25kW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 19.96mm | ||
Height 26.16mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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