IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3
- RS Stock No.:
- 801-1370P
- Mfr. Part No.:
- IXFB82N60Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
PHP29,935.60
(exc. VAT)
PHP33,527.90
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from August 13, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 19 | PHP2,993.56 |
| 20 - 49 | PHP2,882.16 |
| 50 - 249 | PHP2,771.57 |
| 250 + | PHP2,731.89 |
*price indicative
- RS Stock No.:
- 801-1370P
- Mfr. Part No.:
- IXFB82N60Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | HiperFET, Q3-Class | |
| Package Type | PLUS264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.56kW | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 20.29mm | |
| Height | 26.59mm | |
| Width | 5.31mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series HiperFET, Q3-Class | ||
Package Type PLUS264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.56kW | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 20.29mm | ||
Height 26.59mm | ||
Width 5.31mm | ||
Number of Elements per Chip 1 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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