STMicroelectronics STripFET Type P-Channel MOSFET, 12 A, 30 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 792-5717P
- Mfr. Part No.:
- STD26P3LLH6
- Manufacturer:
- STMicroelectronics
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In Stock
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Units | Per Unit |
|---|---|
| 20 - 40 | PHP51.713 |
| 50 - 90 | PHP49.644 |
| 100 - 190 | PHP47.162 |
| 200 + | PHP44.332 |
*price indicative
- RS Stock No.:
- 792-5717P
- Mfr. Part No.:
- STD26P3LLH6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.