STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 3-Pin TO-263 STB18N60M2
- RS Stock No.:
- 792-5707
- Mfr. Part No.:
- STB18N60M2
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
PHP727.55
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PHP814.85
(inc. VAT)
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In Stock
- 2,745 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP145.51 | PHP727.55 |
| 25 - 45 | PHP141.146 | PHP705.73 |
| 50 - 245 | PHP136.912 | PHP684.56 |
| 250 - 495 | PHP132.804 | PHP664.02 |
| 500 + | PHP128.822 | PHP644.11 |
*price indicative
- RS Stock No.:
- 792-5707
- Mfr. Part No.:
- STB18N60M2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | MDmesh M2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21.5nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 9.35 mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series MDmesh M2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21.5nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 9.35 mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
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- STMicroelectronics MDmesh M2 Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220FP STF18N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP18N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB13N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252