Nexperia BSS123 Type N-Channel MOSFET, 150 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123,215
- RS Stock No.:
- 792-0885
- Mfr. Part No.:
- BSS123,215
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 100 units)*
PHP508.70
(exc. VAT)
PHP569.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,000 unit(s) ready to ship from another location
- Plus 19,800 unit(s) shipping from January 01, 2026
- Plus 100 unit(s) shipping from January 06, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 100 - 100 | PHP5.087 | PHP508.70 |
| 200 - 400 | PHP4.986 | PHP498.60 |
| 500 - 900 | PHP4.886 | PHP488.60 |
| 1000 - 4900 | PHP4.788 | PHP478.80 |
| 5000 + | PHP3.941 | PHP394.10 |
*price indicative
- RS Stock No.:
- 792-0885
- Mfr. Part No.:
- BSS123,215
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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