STMicroelectronics STripFET H7 Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin TO-220 STP140N8F7
- RS Stock No.:
- 791-7810
- Mfr. Part No.:
- STP140N8F7
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
PHP1,146.60
(exc. VAT)
PHP1,284.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 955 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP229.32 | PHP1,146.60 |
| 50 - 245 | PHP227.168 | PHP1,135.84 |
| 250 - 495 | PHP224.64 | PHP1,123.20 |
| 500 - 995 | PHP222.238 | PHP1,111.19 |
| 1000 + | PHP220.09 | PHP1,100.45 |
*price indicative
- RS Stock No.:
- 791-7810
- Mfr. Part No.:
- STP140N8F7
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | STripFET H7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 96nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series STripFET H7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 96nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
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- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 STB100N10F7
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD100N10F7
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
