onsemi NTD3055-094 Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 NTD3055-094T4G
- RS Stock No.:
- 791-6286
- Mfr. Part No.:
- NTD3055-094T4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP925.12
(exc. VAT)
PHP1,036.14
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- Plus 2,480 left, shipping from January 26, 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP46.256 | PHP925.12 |
| 40 - 80 | PHP44.868 | PHP897.36 |
| 100 - 180 | PHP43.521 | PHP870.42 |
| 200 - 380 | PHP42.215 | PHP844.30 |
| 400 + | PHP40.948 | PHP818.96 |
*price indicative
- RS Stock No.:
- 791-6286
- Mfr. Part No.:
- NTD3055-094T4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTD3055-094 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.94V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTD3055-094 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.94V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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