onsemi Type N-Channel MOSFET, 560 mA, 30 V Enhancement, 3-Pin SOT-23 NTR4003NT1G
- RS Stock No.:
- 790-5283
- Mfr. Part No.:
- NTR4003NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
PHP392.00
(exc. VAT)
PHP439.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- 300 left, ready to ship from another location
- Plus 23,300 left, shipping from January 02, 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 100 | PHP3.92 | PHP392.00 |
| 200 - 400 | PHP3.85 | PHP385.00 |
| 500 - 900 | PHP3.78 | PHP378.00 |
| 1000 - 1900 | PHP3.452 | PHP345.20 |
| 2000 + | PHP3.417 | PHP341.70 |
*price indicative
- RS Stock No.:
- 790-5283
- Mfr. Part No.:
- NTR4003NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 560mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 1.15nC | |
| Maximum Power Dissipation Pd | 690mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 560mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 1.15nC | ||
Maximum Power Dissipation Pd 690mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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