Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 787-9480P
- Mfr. Part No.:
- SQD25N06-22L_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
PHP2,368.35
(exc. VAT)
PHP2,652.55
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,880 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 25 - 95 | PHP94.734 |
| 100 - 245 | PHP85.26 |
| 250 - 495 | PHP76.736 |
| 500 + | PHP69.064 |
*price indicative
- RS Stock No.:
- 787-9480P
- Mfr. Part No.:
- SQD25N06-22L_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | TO-252 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 62W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type TO-252 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 62W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 2.38mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
