N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC Vishay SiHG30N60E-GE3

RS Stock No.:: 787-9421P
Mfr. Part No.:: SiHG30N60E-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC Vishay SiHG30N60E-GE3

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Bulk discount available

Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

PHP273.57

(exc. VAT)

PHP306.40

(inc. VAT)

Temporarily out of stock - back order for despatch 06/06/2025, delivery within 10 working days from desptach date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit
10 - 19	PHP265.36
20 - 49	PHP257.39
50 - 249	PHP249.66
250 +	PHP242.17

**price indicative

RS Stock No.:: 787-9421P
Mfr. Part No.:: SiHG30N60E-GE3
Manufacturer:: Vishay

SiHG30N60E, E Series Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Series	E Series
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	5.31mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	85 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	15.87mm
Height	20.82mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC Vishay SiHG30N60E-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

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