Vishay Si4190ADY N-Channel MOSFET, 18 A, 100 V Enhancement, 8-Pin SOIC SI4190ADY-T1-GE3

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Subtotal 25 units (supplied on a continuous strip)*

PHP3,137.50

(exc. VAT)

PHP3,514.00

(inc. VAT)

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Units
Per Unit
25 - 95PHP125.50
100 - 245PHP121.734
250 - 495PHP118.082
500 +PHP114.542

*price indicative

Packaging Options:
RS Stock No.:
787-9235P
Mfr. Part No.:
SI4190ADY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

100V

Package Type

SOIC

Series

Si4190ADY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6W

Typical Gate Charge Qg @ Vgs

44.4nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4mm

Length

5mm

Height

1.5mm

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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