Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

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Subtotal (1 tape of 20 units)*

PHP346.92

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PHP388.56

(inc. VAT)

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Units
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Per Tape*
20 - 20PHP17.346PHP346.92
40 - 80PHP15.848PHP316.96
100 - 180PHP14.822PHP296.44
200 - 380PHP12.967PHP259.34
400 +PHP12.04PHP240.80

*price indicative

Packaging Options:
RS Stock No.:
787-9024
Mfr. Part No.:
SI1032R-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210mA

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SC-75

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

340mW

Maximum Gate Source Voltage Vgs

±6 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS

Height

0.8mm

Length

1.68mm

Width

0.86 mm

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


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