Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

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Subtotal (1 tape of 20 units)*

PHP410.40

(exc. VAT)

PHP459.60

(inc. VAT)

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Units
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Per Tape*
20 - 20PHP20.52PHP410.40
40 - 80PHP18.748PHP374.96
100 - 180PHP17.535PHP350.70
200 - 380PHP15.34PHP306.80
400 +PHP14.244PHP284.88

*price indicative

Packaging Options:
RS Stock No.:
787-9024
Mfr. Part No.:
SI1032R-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210mA

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SC-75

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±6 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

340mW

Maximum Operating Temperature

150°C

Height

0.8mm

Standards/Approvals

IEC 61249-2-21, RoHS

Width

0.86 mm

Length

1.68mm

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


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