N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 20)**

PHP13.11

(exc. VAT)

PHP14.68

(inc. VAT)

Temporarily out of stock - back order for despatch 20/04/2025, delivery within 10 working days from desptach date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Tape**
20 - 20	PHP13.11	PHP262.20
40 - 80	PHP11.799	PHP235.98
100 - 180	PHP10.62	PHP212.40
200 - 380	PHP9.558	PHP191.16
400 +	PHP8.602	PHP172.04

**price indicative

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

Si1012CR, N-Channel 20V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	630 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-416 (SC-75A)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.1 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	240 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	1.68mm
Typical Gate Charge @ Vgs	1.3 nC @ 8 V
Transistor Material	Si
Width	0.86mm
Height	0.8mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

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