N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STMicroelectronics STP45N65M5
- RS Stock No.:
- 783-3107
- Mfr. Part No.:
- STP45N65M5
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)**
PHP1,886.83
(exc. VAT)
PHP2,113.25
(inc. VAT)
Available for back order.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
5 - 20 | PHP377.366 | PHP1,886.83 |
25 - 95 | PHP367.932 | PHP1,839.66 |
100 - 245 | PHP358.732 | PHP1,793.66 |
250 - 495 | PHP349.764 | PHP1,748.82 |
500 + | PHP341.02 | PHP1,705.10 |
**price indicative
- RS Stock No.:
- 783-3107
- Mfr. Part No.:
- STP45N65M5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 35 A | |
Maximum Drain Source Voltage | 710 V | |
Package Type | TO-220 | |
Series | MDmesh M5 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 78 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 210 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Typical Gate Charge @ Vgs | 82 nC @ 10 V | |
Length | 10.4mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Width | 4.6mm | |
Transistor Material | Si | |
Height | 15.75mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 710 V | ||
Package Type TO-220 | ||
Series MDmesh M5 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 78 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 210 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 82 nC @ 10 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Transistor Material Si | ||
Height 15.75mm | ||
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