STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 42 A, 710 V Enhancement, 3-Pin TO-263 STB57N65M5
- RS Stock No.:
- 783-2977
- Mfr. Part No.:
- STB57N65M5
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
PHP720.86
(exc. VAT)
PHP807.36
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 6 unit(s) shipping from August 31, 2026
- Plus 968 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP720.86 |
| 10 - 49 | PHP702.84 |
| 50 - 99 | PHP685.27 |
| 100 - 249 | PHP668.11 |
| 250 + | PHP651.41 |
*price indicative
- RS Stock No.:
- 783-2977
- Mfr. Part No.:
- STB57N65M5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-263 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.35mm | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-263 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.35mm | ||
Height 4.6mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-220 STF57N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-247 STW57N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-220 STP57N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-263 STB45N65M5