onsemi NTS4409N Type N-Channel MOSFET, 700 mA, 25 V Enhancement, 3-Pin SOT-23 NTS4409NT1G
- RS Stock No.:
- 780-4770
- Mfr. Part No.:
- NTS4409NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP418.275
(exc. VAT)
PHP468.475
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,825 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP16.731 | PHP418.28 |
| 50 - 100 | PHP16.229 | PHP405.73 |
| 125 - 225 | PHP15.256 | PHP381.40 |
| 250 - 475 | PHP13.882 | PHP347.05 |
| 500 + | PHP12.216 | PHP305.40 |
*price indicative
- RS Stock No.:
- 780-4770
- Mfr. Part No.:
- NTS4409NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 700mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | NTS4409N | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 330mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 700mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Series NTS4409N | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 330mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 25V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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