onsemi Isolated μCool 2 Type P, Type N-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin WDFN
- RS Stock No.:
- 780-0655P
- Mfr. Part No.:
- NTLJD3119CTBG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 20 units (supplied on a continuous strip)*
PHP972.92
(exc. VAT)
PHP1,089.68
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from February 05, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 20 - 40 | PHP48.646 |
| 50 - 90 | PHP47.822 |
| 100 - 190 | PHP31.949 |
| 200 + | PHP31.435 |
*price indicative
- RS Stock No.:
- 780-0655P
- Mfr. Part No.:
- NTLJD3119CTBG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | μCool | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Power Dissipation Pd | 2.3W | |
| Forward Voltage Vf | 0.69V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Width | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series μCool | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Power Dissipation Pd 2.3W | ||
Forward Voltage Vf 0.69V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Width 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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