N-Channel MOSFET Transistor, 10.2 A, 600 V, 3-Pin DPAK Fairchild FCD380N60E

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Subtotal 25 units (supplied on a continuous strip)*

PHP3,705.95

(exc. VAT)

PHP4,150.675

(inc. VAT)

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25 - 120PHP148.238
125 - 245PHP129.688
250 - 495PHP116.39
500 +PHP106.376

*price indicative

Packaging Options:
RS Stock No.:
774-1137P
Mfr. Part No.:
FCD380N60E
Manufacturer:
Fairchild Semiconductor
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Brand

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

10.2 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

106 W

Maximum Gate Source Voltage

+30 V

Length

6.73mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

34 nC @ 10 V

Width

6.22mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.39mm

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.


MOSFET Transistors, ON Semi


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