Renesas P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK 2SJ601-AZ

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal 25 units (supplied in a bag)*

PHP1,711.20

(exc. VAT)

PHP1,916.55

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per Unit
25 - 95PHP68.448
100 - 245PHP67.408
250 - 495PHP66.428
500 +PHP65.442

*price indicative

Packaging Options:
RS Stock No.:
772-5258P
Mfr. Part No.:
2SJ601-AZ
Manufacturer:
Renesas Electronics
Find similar products by selecting one or more attributes.
Select all

Brand

Renesas Electronics

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

7mm

Maximum Operating Temperature

+150 °C

Height

2.3mm

P-Channel MOSFET, Renesas Electronics (NEC)



MOSFET Transistors, Renesas Electronics (NEC)

Related links