Renesas P-Channel MOSFET, 25 A, 60 V, 4-Pin IPAK 2SJ600-AZ

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Subtotal 20 units (supplied in a bag)*

PHP774.22

(exc. VAT)

PHP867.12

(inc. VAT)

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Units
Per Unit
20 - 40PHP38.711
50 - 90PHP38.313
100 - 190PHP37.911
200 +PHP37.54

*price indicative

Packaging Options:
RS Stock No.:
772-5254P
Mfr. Part No.:
2SJ600-AZ
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

P

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

79 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Length

6.5mm

Number of Elements per Chip

1

Transistor Material

Si

Width

7mm

Maximum Operating Temperature

+150 °C

Height

2.3mm

P-Channel MOSFET, Renesas Electronics (NEC)



MOSFET Transistors, Renesas Electronics (NEC)

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