N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2300UFB4-7B
- RS Stock No.:
- 770-5128
- Mfr. Part No.:
- DMN2300UFB4-7B
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)**
PHP245.70
(exc. VAT)
PHP275.20
(inc. VAT)
14500 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
50 - 50 | PHP4.914 | PHP245.70 |
100 - 200 | PHP4.767 | PHP238.35 |
250 - 450 | PHP4.624 | PHP231.20 |
500 - 950 | PHP4.485 | PHP224.25 |
1000 + | PHP4.35 | PHP217.50 |
**price indicative
- RS Stock No.:
- 770-5128
- Mfr. Part No.:
- DMN2300UFB4-7B
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.3 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | X2-DFN1006 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 500 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 0.95V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Width | 0.65mm | |
Typical Gate Charge @ Vgs | 1.6 nC @ 4.5 V | |
Length | 1.05mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 0.35mm | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.3 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type X2-DFN1006 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.95V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 0.65mm | ||
Typical Gate Charge @ Vgs 1.6 nC @ 4.5 V | ||
Length 1.05mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.35mm | ||
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