onsemi UniFET N-Channel MOSFET, 52 A, 200 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 759-8983P
- Mfr. Part No.:
- FDB52N20TM
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 25 units (supplied on a continuous strip)*
PHP5,489.75
(exc. VAT)
PHP6,148.50
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Supply shortage
- 800 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit |
|---|---|
| 25 - 95 | PHP219.59 |
| 100 - 245 | PHP212.998 |
| 250 - 495 | PHP206.608 |
| 500 + | PHP200.412 |
*price indicative
- RS Stock No.:
- 759-8983P
- Mfr. Part No.:
- FDB52N20TM
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | UniFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 357W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.572mm | |
| Length | 9.98mm | |
| Width | 10.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series UniFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 357W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.572mm | ||
Length 9.98mm | ||
Width 10.16mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- Arduino Uno Rev 3 SMD
- RS PRO Stainless Steel Perforated Metal Sheet 500mm x 500mm, 0.55mm Thick
- RS PRO Combination Pliers Straight Tip, 34mm Jaw
- Belden Cat6 Ethernet Cable Grey PVC Sheath, 100m
- RS PRO Phillips Screwdriver 150 mm Blade, 270 mm Overall
- RS PRO 150 mm Stainless Steel Scissors
- Stanley Tylon 8m Tape Measure, Metric & Imperial
- Unistrut 41 x 41mm Slotted Galvanised Steel Strut, 2m Long