onsemi UniFET N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-263 FDB33N25TM
- RS Stock No.:
- 759-8973P
- Mfr. Part No.:
- FDB33N25TM
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
PHP1,887.10
(exc. VAT)
PHP2,113.60
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Supply shortage
Due to limitations in the supply chain, stock is being assigned as it becomes available.
Units | Per Unit |
|---|---|
| 10 - 38 | PHP188.71 |
| 40 - 98 | PHP183.05 |
| 100 - 198 | PHP177.565 |
| 200 + | PHP172.24 |
*price indicative
- RS Stock No.:
- 759-8973P
- Mfr. Part No.:
- FDB33N25TM
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 235W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 36.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Width | 11.33mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 235W | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 36.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Width 11.33mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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