Infineon OptiMOS 3 Type N-Channel MOSFET, 40 A, 40 V Enhancement, 8-Pin TSDSON BSZ097N04LSGATMA1

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PHP243.20

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PHP272.40

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Units
Per Unit
Per Pack*
5 - 120PHP48.64PHP243.20
125 - 495PHP47.18PHP235.90
500 - 2495PHP45.764PHP228.82
2500 - 24995PHP44.392PHP221.96
25000 +PHP43.058PHP215.29

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Packaging Options:
RS Stock No.:
754-5367
Mfr. Part No.:
BSZ097N04LSGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS 3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

35W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.4mm

Width

3.4 mm

Height

1.1mm

Distrelec Product Id

304-45-305

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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