Infineon OptiMOS 3 Type N-Channel MOSFET, 98 A, 120 V Enhancement, 8-Pin TDSON BSC077N12NS3GATMA1

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1 - 9PHP190.22
10 - 49PHP184.52
50 - 99PHP178.99
100 - 249PHP173.62
250 +PHP168.41

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Packaging Options:
RS Stock No.:
754-5285
Mfr. Part No.:
BSC077N12NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

98A

Maximum Drain Source Voltage Vds

120V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

66nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

139W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

6.1 mm

Length

5.35mm

Standards/Approvals

No

Height

1.1mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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