Infineon OptiMOS 3 Type N-Channel MOSFET, 49 A, 40 V Enhancement, 8-Pin TDSON BSC093N04LSGATMA1
- RS Stock No.:
- 752-8164
- Mfr. Part No.:
- BSC093N04LSGATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP40.756 | PHP203.78 |
| 25 - 95 | PHP38.684 | PHP193.42 |
| 100 - 245 | PHP36.736 | PHP183.68 |
| 250 - 495 | PHP34.912 | PHP174.56 |
| 500 + | PHP33.212 | PHP166.06 |
*price indicative
- RS Stock No.:
- 752-8164
- Mfr. Part No.:
- BSC093N04LSGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS 3 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 5.35mm | |
| Length | 6.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS 3 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8.6nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 5.35mm | ||
Length 6.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™ 3 Series MOSFET, 49A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - BSC093N04LSGATMA1
This MOSFET is designed for efficient power management and control, playing a significant role in automation and electrical applications that require high performance. Its integration enhances circuit efficiency, contributing to overall system reliability and responsiveness in various environments.
Features & Benefits
• Provides a maximum continuous drain current of 49A
• Operates effectively in a voltage range of 40V
• Low drain-source resistance improves performance
• Supports surface mount design for easier integration
• High thermal stability with a maximum temperature rating of +150°C
• Suitable for diverse applications due to a wide gate threshold voltage range
Applications
• Ideal for power in automation and robotics
• Utilised in electric vehicle charging systems
• Suitable for power supply and conversion tasks
• Applied in motor control circuits and drives
• Used in telecommunications for efficient signal management
What type of load can this device handle effectively?
It can manage loads up to 49A, making it appropriate for high-current applications across various industries.
Is it compatible with surface mount technology?
Yes, it features a surface mount design, facilitating straightforward installation on PCBs.
What are the gate voltage limitations for this component?
The device has gate-source voltage limits of -20V to +20V, allowing flexibility in circuit designs.
Can it operate in extreme temperature conditions?
Yes, it effectively operates within a temperature range from -55°C to +150°C, ensuring functionality in harsh environments.
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
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- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON BSC900N20NS3GATMA1